2N5461 Datasheet | Central Semiconductor

2N5460 2N5461 2N5462 SILICON P-CHANNEL JFETS w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR 2N5460, 2N5461, and 2N5462 are silicon P-Channel JFETs designed for low level amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Drain-Gate Voltage Reverse Gate-Source Voltage Continuous Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VDG VGSR IG PD TJ, Tstg 40 40 10 310 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5460 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=20V - 5.0 - 5.0 IGSS VGS=20V, TA=100°C - 1.0 - 1.0 IDSS VDS=15V, f=1.0kHz 1.0 5.0 2.0...