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2N5461 - SILICON P-CHANNEL JFETS

Download the 2N5461 datasheet PDF. This datasheet also covers the 2N5460 variant, as both devices belong to the same silicon p-channel jfets family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5460-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Central Semiconductor

Part Number Description
2N5460 SILICON P-CHANNEL JFETS
2N5462 SILICON P-CHANNEL JFETS
2N5400 SILICON PNP TRANSISTOR
2N5401 SILICON PNP TRANSISTOR
2N5415 SILICON PNP TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5460 2N5461 2N5462 SILICON P-CHANNEL JFETS w w w. c e n t r a l s e m i . c o m The CENTRAL SEMICONDUCTOR 2N5460, 2N5461, and 2N5462 are silicon P-Channel JFETs designed for low level amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Drain-Gate Voltage Reverse Gate-Source Voltage Continuous Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VDG VGSR IG PD TJ, Tstg 40 40 10 310 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5460 2N5461 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=20V - 5.0 - 5.0 IGSS VGS=20V, TA=100°C - 1.0 - 1.0 IDSS VDS=15V, f=1.0kHz 1.0 5.0 2.0 9.0 BVGSS IG=10μA 40 - 40 - VGS VDS=15V, ID=0.1mA 0.5 4.0 - - VGS VDS=15V, ID=0.