Datasheet4U Logo Datasheet4U.com

2N5582 - SILICON NPN TRANSISTOR

General Description

The CENTRAL SEMICONDUCTOR 2N5582 is a silicon NPN transistor designed for general purpose amplifier and switching applications.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N5582 SILICON NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5582 is a silicon NPN transistor designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-46 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 75 40 6.0 800 600 -65 to +200 292 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=60V ICBO VCB=60V, TA=150°C ICEV VCE=60V, VBE=3.0V IEBO VEB=3.0V BVCBO IC=10μA 75 BVCEO IC=10mA 40 BVEBO IE=10μA 6.