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2N5582 Datasheet Silicon NPN Transistor

Manufacturer: Central Semiconductor

Overview: 2N5582 SILICON NPN TRANSISTOR w w w. c e n t r a l s e m i .

General Description

: The CENTRAL SEMICONDUCTOR 2N5582 is a silicon NPN transistor designed for general purpose amplifier and switching applications.

MARKING: FULL PART NUMBER TO-46 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 75 40 6.0 800 600 -65 to +200 292 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=60V ICBO VCB=60V, TA=150°C ICEV VCE=60V, VBE=3.0V IEBO VEB=3.0V BVCBO IC=10μA 75 BVCEO IC=10mA 40 BVEBO IE=10μA 6.0 VCE(SAT) IC=150mA, IB=15mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=15mA 0.6 VBE(SAT) IC=500mA, IB=50mA hFE VCE=10V, IC=100μA 35 hFE VCE=10V, IC=1.0mA 50 hFE VCE=10V, IC=10mA 75 hFE VCE=10V, IC=10mA, TA=-55°C 35 hFE VCE=10V, IC=150mA 100 hFE VCE=1.0V, IC=150mA 50 hFE VCE=10V, IC=500mA 40 MAX 10 10 10 10 0.3 1.0 1.2 2.0 300 UNITS V V V mA mW °C °C/W UNITS nA μA nA nA V V V V V V V R1 (2-December 2013) 2N5582 SILICON NPN TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX fT VCE=20V, IC=20mA, f=100MHz 300 Cob VCB=10V, IE=0, f=100kHz 8.0 Cib VEB=0.5V, IC=0, f=100kHz 25 td VCC=30V, VBE(off)=0.5V, IC=150mA, IB1=15mA 10 tr VCC=30V, VBE(off)=0.5V, IC=150mA, IB1=15mA 25 ts VCC=30V, IC=150mA, IB1=IB2=15mA 225 tf VCC=30V, IC=150mA, IB1=IB2=15mA 60 TO-46 CASE - MECHANICAL OUTLINE UNITS MHz pF pF ns ns ns ns w w w.

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