2N5582 Datasheet | Microsemi

TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/423 Devices 2N5581 2N5582 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tstg Value 50 75 6.0 800 0.5 2.0 -55 to +200 Unit Vdc Vdc Vdc m Adc W W 0 C .. @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 m W/0C for TA > 250C 2) Derate linearly 11.43 m W/0C for TC > 250C TO-46- (TO-206AB) - See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICBO Min. 50 10 10 10 10 Max. Unit Vdc ηAdc µAdc ηAdc µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 m Adc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 75 Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 6.0Vdc IEBO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N5581, 2N5582 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 0.1 m Adc, VCE = 10 Vdc IC =1.0 m Adc, VCE = 10 Vdc IC = 10 m Adc, VCE = 10 Vdc IC = 150 m Adc, VCE = 10 Vdc IC = 500 m Adc, VCE = 10 Vdc IC = 0.1 m Adc, VCE = 10 Vdc IC =1.0 m Adc, VCE = 10 Vdc IC = 10 m Adc, VCE = 10 Vdc IC = 150 m Adc, VCE = 10 Vdc IC = 500 m Adc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 150 m Adc, IB = 15 m Adc IC = 500 m Adc, IB = 50 m Adc Base-Emitter Voltage IC = 150 m Adc, IB = 15 m Adc IC = 500 m Adc, IB = 50 m Adc 2N5581 h FE 30 35 40 40 20 50 75 100 100 30 2N5582 h FE VCE(sat) 0.3 1.0 0.6 1.2...