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2N5582 - NPN SILICON SWITCHING TRANSISTOR

Download the 2N5582 datasheet PDF. This datasheet also covers the 2N5581 variant, as both devices belong to the same npn silicon switching transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5581_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/423 Devices 2N5581 2N5582 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tstg Value 50 75 6.0 800 0.5 2.0 -55 to +200 Unit Vdc Vdc Vdc mAdc W W 0 C www.DataSheet4U.com @ TA = 250C (1) @ TC = 250C (2) Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA > 250C 2) Derate linearly 11.43 mW/0C for TC > 250C TO-46* (TO-206AB) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICBO Min. 50 10 10 10 10 Max.