Datasheet Details
| Part number | 2N5679 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 465.84 KB |
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Datasheet | 2N5679-CentralSemiconductor.pdf |
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Overview: 2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON POWER TRANSISTORS TO-39 CASE w w w. c e n t r a l s e m i .
| Part number | 2N5679 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 465.84 KB |
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Datasheet | 2N5679-CentralSemiconductor.pdf |
|
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: The CENTRAL SEMICONDUCTOR 2N5679, 2N5681 series devices are complementary silicon power transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier and switching applications where high voltages are required.
MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Continuous Base Current IB Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA Thermal Resistance ΘJC 2N5679 2N5681 100 2N5680 2N5682 120 100 120 4.0 1.0 0.5 1.0 10 -65 to +200 175 17.5 UNITS V V V A A W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEV VCE=Rated VCEO, VEB=1.5V ICEV VCE=Rated VCEO, VEB=1.5V, TC=150°C ICEO VCE=70V (2N5679, 2N5681) ICEO VCE=80V (2N5680, 2N5682) IEBO VEB=4.0V BVCEO IC=10mA (2N5679, 2N5681) 100 BVCEO IC=10mA (2N5680, 2N5682) 120 VCE(SAT) IC=250mA, IB=25mA VCE(SAT) IC=500mA, IB=50mA VCE(SAT) IC=1.0A, IB=200mA VBE(ON) VCE=2.0V IC=250mA hFE VCE=2.0V, IC=250mA 40 hFE VCE=2.0V, IC=1.0A 5.0 hfe VCE=1.5V, IC=0.2A, f=1.0kHz 40 fT VCE=10V, IC=100mA, f=10MHz 30 Cob VCB=20V, IE=0, f=1.0MHz MAX 1.0 1.0 1.0 10 10 1.0 0.6 1.0 2.0 1.0 150 50 UNITS µA µA mA µA µA µA V V V V V V MHz pF R2 (2-December 2013) 2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON POWER TRANSISTORS TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER w w w.
c e n t r a l s e m i .
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N5679 | PNP SILICON TRANSISTORS | Seme LAB |
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2N5679 | Bipolar Transistor | Multicomp |
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2N5679 | GENERAL PURPOSE TRANSISTOR | Motorola |
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2N5679 | PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS | CDIL |
 |
2N5679 | PNP Silicon Amplifier | VPT |
| Part Number | Description |
|---|---|
| 2N5607 | Silicon power Transistor |
| 2N5608 | Silicon power Transistor |
| 2N5609 | Silicon power Transistor |
| 2N5632 | (2N5632 - 2N5634) SILICON POWER TRANSISTOR |
| 2N5633 | (2N5632 - 2N5634) SILICON POWER TRANSISTOR |
| 2N5634 | (2N5632 - 2N5634) SILICON POWER TRANSISTOR |
| 2N5638 | N-Channel MOSFET |
| 2N5639 | N-Channel MOSFET |
| 2N5640 | N-Channel MOSFET |
| 2N5680 | COMPLEMENTARY SILICON POWER TRANSISTORS |