DESCRIPTION
: A Silicon epitaxial PNP planer transistor in a TO-39 type package designed for use as drivers for high transistors in general purpose amplifier and switching circuits. Collector 3 2 Base 1 Emitter MAXIMUM RATINGS
: Characteristic Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Base Current Total Device Dissipation Total Device Dissipation Operating Junction Temperature, Storage Temperature Range, Thermal Resistance, Junction-to-Case, Thermal Resistance, Junction-to-Ambient, Symbol VCEO (IE = 0), VCBO (IC = 0), VEBO IC IB (TC = +25°C), Ptot (TA = +25°C), Ptot TJ Tstg RthJC RthJA Rating 100 4 1 500 10 1 +200 -65 to +200 17.4 175 Unit V A mA W °C °C/W °C/W°C Page <1> 23/04/13 V1.0 Bipolar Transistor ELECTRICAL CHARACTERISTICS
: TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Max Unit ICBO VCB = 100V, IE = 0 1 Collector Cutoff Current ICEO ICEV VCE = 70V, IB = 0 VCE = 100V, VBE = -1.5V 10 µA - VCE = 100V, VBE =...
Multicomp
