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2N5963 - NPN SILICON TRANSISTOR

This page provides the datasheet information for the 2N5963, a member of the 2N5962 NPN SILICON TRANSISTOR family.

Description

The CENTRAL SEMICONDUCTOR 2N5961 series devices are epoxy molded silicon NPN transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain (hFE) and low noise.

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Datasheet Details

Part number 2N5963
Manufacturer Central Semiconductor
File Size 309.76 KB
Description NPN SILICON TRANSISTOR
Datasheet download datasheet 2N5963 Datasheet
Additional preview pages of the 2N5963 datasheet.

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Full PDF Text Transcription

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2N5961 2N5962 2N5963 SILICON NPN TRANSISTORS TO-92 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5961 series devices are epoxy molded silicon NPN transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain (hFE) and low noise. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg 2N5961 2N5962 2N5963 60 45 30 60 45 30 7.0 50 625 1.
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