Datasheet Details
| Part number | 2N6286 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 257.22 KB |
| Description | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| Datasheet | 2N6286 2N6282 Datasheet (PDF) |
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Overview: 2N6282 2N6283 2N6284 NPN 2N6285 2N6286 2N6287 PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i .
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N6286 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 257.22 KB |
| Description | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| Datasheet | 2N6286 2N6282 Datasheet (PDF) |
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: The CENTRAL SEMICONDUCTOR 2N6282, 2N6285 series devices are complementary silicon monolithic Darlington transistors, manufactured by the epitaxial base process, designed for general purpose high current, high gain amplifier and switching applications.
MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6282 2N6285 60 60 2N6283 2N6286 80 80 5.0 20 40 0.5 160 -65 to +200 1.09 2N6284 2N6287 100 100 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEX VCE=Rated VCEO, VEB=1.5V ICEX VCE=Rated VCEO, VEB=1.5V, TC=150°C ICEO VCE=½Rated VCEO IEBO VEB=5.0V BVCEO IC=100mA, (2N6282, 2N6285) 60 BVCEO IC=100mA, (2N6283, 2N6286) 80 BVCEO IC=100mA, (2N6284, 2N6287) 100 VCE(SAT) IC=10A, IB=40mA VCE(SAT) IC=20A, IB=200mA VBE(SAT) IC=20A, IB=200mA VBE(ON) VCE=3.0V, IC=10A hFE VCE=3.0V, IC=10A 750 hFE VCE=3.0V, IC=20A 100 hfe VCE=3.0V, IC=10A, f=1.0kHz 300 fT VCE=3.0V, IC=10A, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=100kHz (NPN types) Cob VCB=10V, IE=0, f=100kHz (PNP types) MAX 0.5 5.0 1.0 2.0 2.0 3.0 4.0 2.8 18K 400 600 UNITS V V V A A A W °C °C/W UNITS mA mA mA mA V V V V V V V MHz pF pF R1 (4-February 2014) 2N6282 2N6283 2N6284 NPN 2N6285 2N6286 2N6287 PNP COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER w w w.
c e n t r a l s e m i .
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6286 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | ON Semiconductor |
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2N6286 | PNP DARLINGTON POWER SILICON TRANSISTOR | Microsemi Corporation |
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2N6286 | PNP Darlington Power Silicon Transistor | VPT |
 |
2N6286 | Silicon PNP Power Transistors | Savantic |
 |
2N6286 | PNP Darlington Power Silicon Transistor | Comset Semiconductors |
| Part Number | Description |
|---|---|
| 2N6282 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 2N6283 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 2N6284 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 2N6285 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 2N6287 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 2N6288 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2N6211 | SILICON PNP POWER TRANSISTORS |
| 2N6212 | SILICON PNP POWER TRANSISTORS |
| 2N6213 | SILICON PNP POWER TRANSISTORS |
| 2N6226 | COMPLEMENTARY SILICON POWER TRANSISTORS |