Datasheet Details
| Part number | 2N6532 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 79.82 KB |
| Description | NPN POWER TRANSISTOR |
| Datasheet | 2N6532 2N6530 Datasheet (PDF) |
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Overview: DATA SHEET 2N6530 2N6531 2N6532 2N6533 NPN POWER TRANSISTOR TO-220.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N6532 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 79.82 KB |
| Description | NPN POWER TRANSISTOR |
| Datasheet | 2N6532 2N6530 Datasheet (PDF) |
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: The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power applications requiring extremely high gain.
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCER VCEV VCEO VEBO IC ICM PD TJ,Tstg ΘJC 2N6530 80 80 80 80 2N6531 2N6532 100 100 100 100 100 100 100 100 5.0 8.0 15 65 2N6533 120 120 120 120 -65 to +150 1.92 UNITS V V V V V A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N6530 2N6531 2N6532 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX ICEO VCE=Rated VCEO 1.0 1.0 1.0 ICEV VCE=Rated VCEV, 0.5 0.5 0.5 VEB=1.5V ICEV VCE=Rated VCEV, 5.0 5.0 5.0 VEB=5.0V, TC=125°C IEBO VEB=5.0V 5.0 5.0 5.0 BVCER IC=200mA, RBE=100Ω 80 100 100 BVCEO IC=200mA 80 100 100 BVCEV IC=200mA, VEB=1.5V 80 100 100 VCE(SAT) IC=3.0A, IB=6.0mA 3.0 VCE(SAT) IC=5.0A, IB=10mA 2.0 2.0 VCE(SAT) IC=8.0A, IB=80mA 3.0 3.0 3.0 VBE(ON) VCE=3.0V, IC=3.0A 2.8 VBE(ON) VCE=3.0V, IC=5.0A 2.8 2.8 VBE(ON) VCE=3.0V, IC=8.0A 4.5 4.5 4.5 2N6533 MIN MAX 1.0 0.5 5.0 5.0 120 120 120 2.0 3.0 2.8 4.5 UNITS mA mA mA mA V V V V V V V V V (CONTINUED ON REVERSE SIDE) R0 2N6530 SERIES NPN POWER TRANSISTOR ELECTRICAL CHARACTERISTICS (Continued) SYMBOL TEST CONDITIONS 2N6530 2N6531 2N6532 2N6533 MIN MAX MIN MAX MIN MAX MIN MAX hFE hFE hFE VF hfe |hfe| Cob IS/b ES/b VCE=3.0V, IC=3.0A VCE=3.0V, IC=5.0A 1K VCE=3.0V, IC=8.0A 100 IC=10A VCE=5.0V, IC=1.0A, f=1.0kHz 1K VCE=5.0V, IC=1.0A, f=1.0MHz 20 VCB=10V, IE=0, f=1.0MHz VCE=24V, t=0.5s nonrep.
2.7 VEB=1.5V, IC=4.5A, 120 RBE=100Ω, L=12mH 10K 5K 2.8 200 500 10K 100 5K 2.8 1K 20 200 2.
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| ETC | 2N6532 | 8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS | ETC |
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2N6532 | Silicon Power Transistor | SavantIC |
| Part Number | Description |
|---|---|
| 2N6530 | NPN POWER TRANSISTOR |
| 2N6531 | NPN POWER TRANSISTOR |
| 2N6533 | NPN POWER TRANSISTOR |
| 2N6515 | COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS |
| 2N6516 | COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS |
| 2N6517 | COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS |
| 2N6518 | COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS |
| 2N6519 | COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS |
| 2N6520 | COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS |
| 2N6544 | NPN SILICON POWER TRANSISTOR |