BU208A Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR BU208, BU208A types are high voltage NPN silicon power transistors, manufactured by the multiepitaxial mesa process, designed for fast switching horizontal deflection circuits in color televisions. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCES VCEO VEBO IC ICM PD TJ, Tstg JC 1500 700 10 8.0 15 150 -65 to +175 1.0 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICES VCE=1500V IEBO VEB=5.0V BVCEO IC=100m A BVEBO IE=10m A VCE(SAT) IC=4.5A, IB=2.0A (BU208) VCE(SAT) IC=4.5A, IB=2.0A (BU208A) VBE(SAT) IC=4.5A, IB=2.0A f T VCE=5.0V, IC=100m A, f=5.0MHz 7.0 ts VCC=140V, IC=4.5A, h FE=2.5 7.0 tf LC=0.9m H, LB=3.0μH MAX 2.0 100 5.0 1.0 1.3 UNITS V V V A A W °C °C/W UNITS m A μA V V V V V MHz μs μs R0 (5-October 2012) BU208 BU208A HIGH VOLTAGE NPN SILICON POWER TRANSISTOR TO-3 CASE - MECHANICAL OUTLINE R2 LEAD CODE: 1) Base 2)...