DESCRIPTION
SILICON DIFFUSED POWER TRANSISTOR The UTC 1 TO-3 3 2 1: Base; 2: Emitter; 3: Collector QUICK REFERENCE DATA PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time SYMBOL TEST CONDITIONS MIN MAX 1500 700 8 15 150 1.0 1.0 UNIT V V A A W V µs VCESM VBE=0V VCEO IC ICM PD Tc=25°C VCEsat Ic=4.5A; IB=2.0A tf Ic=4.5A, IB1=-1/2 IB2=1.8A, Vcc=100V LIMITING RATINGS PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature SYMBOL VCESM VCEO IC ICM IB IBM PD Tstg Tj TEST CONDITIONS VBE=0V MIN MAX 1500 700 8 15 2 4 150 +150 150 UNIT V V A A A A W °C °C Tc=25°C -55 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R205-005,A UTC BU208A PARAMETER SILICON DIFFUSED POWE...
Unisonic Technologies
