STMicroelectronics BU208A
The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.| Part No. | BU208A |
|---|---|
| Datasheet | BU208A Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
: s HORIZONTAL DEFLECTION FOR COLOUR TVDESCRIPTION
1 2 TO-3 TO-218 33 22 1 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM For TO-3 : C = Tab E = Pin2.ABSOLUTE MAXIMUM RATINGS
Symbol VCES VCEO V EBO IC ICM Parameter Collector-Emit ter Volt age (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitt er-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Ptot Vi so l Tstg Tj Total Dissipation at Tc = 25 oC Insulation W ithstand Voltage (RMS) from All Three Leads to Exernal Heatsink St orage Temperature Max. Operating Junction Temperature BU208A TO - 3 150
