Datasheet4U Logo Datasheet4U.com

CDMSJ22010-650 - N-CHANNEL SUPER JUNCTION MOSFET

Datasheet Summary

Description

The CENTRAL SEMICONDUCTOR CDMSJ22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), and power chargers.

Features

  • High voltage capability (VDS=650V).
  • Low gate charge (Qgs=4nC).
  • Low rDS(ON) (0.39Ω).

📥 Download Datasheet

Datasheet preview – CDMSJ22010-650
Other Datasheets by Central Semiconductor

Full PDF Text Transcription

Click to expand full text
CDMSJ22010-650 N-CHANNEL SUPER JUNCTION MOSFET 10 AMP, 650 VOLT TO-220FP CASE APPLICATIONS: • Power Factor Correction • TV Power • UPS • PD Charger • Adapter w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDMSJ22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), and power chargers. This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage and low gate charge. MARKING: CDMSJ 10-650 FEATURES: • High voltage capability (VDS=650V) • Low gate charge (Qgs=4nC) • Low rDS(ON) (0.
Published: |