CDMSJ22010-650 Description
The CENTRAL SEMICONDUCTOR CDMSJ22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), and power chargers. This MOSFET bines high voltage capability with low rDS(ON), low threshold voltage and low gate charge.
CDMSJ22010-650 Key Features
- High voltage capability (VDS=650V)
- Low gate charge (Qgs=4nC)
- Low rDS(ON) (0.39Ω)
- 55 to +150
- Continued: (TA=25°C unless otherwise noted)
- MECHANICAL OUTLINE