CDMSJ22010-650 Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR CDMSJ22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), and power chargers. This MOSFET bines high voltage capability with low r DS(ON), low threshold voltage and low gate charge. MARKING: CDMSJ 10-650 FEATURES : - High voltage capability (VDS=650V) - Low gate charge (Qgs=4n C) - Low r DS(ON) (0.39Ω) MAXIMUM RATINGS: (TC=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TC=100°C) Pulsed Drain Current Diode Forward Current Power Dissipation Power Dissipation (TC=100°C) Operating and Storage Junction Temperature SYMBOL UNITS TJ, Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS: (TJ=25°C unless otherwise noted) SYMBOL TEST CONDITIONS UNITS BVDSS VGS(th) RDS(on) IDSS IGSS IGSSR gfs Qg Qgs VGS=0V, ID=250μA 730 V VDS=VGS, ID=250μA VGS=10V, ID=5.0A (Note 1) 340 390 mΩ VDS=650V, VGS=0V1.0 μA VGS=30V, VDS=0V100 n...