Datasheet Details
| Part number | CEN250B1 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 488.53 KB |
| Description | 4.0 AMP SCR |
| Download | CEN250B1 Download (PDF) |
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Overview: CEN250B1 CEN250D1 CEN250M1 4.0 AMP SCR 200 THRU 600 VOLT w w w. c e n t r a l s e m i .
| Part number | CEN250B1 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 488.53 KB |
| Description | 4.0 AMP SCR |
| Download | CEN250B1 Download (PDF) |
|
|
|
: The CENTRAL SEMICONDUCTOR CEN250B1, CEN250D1, and CEN250M1 are epoxy molded silicon controlled rectifiers designed for sensing circuit applications and control systems.
MARKING: FULL PART NUMBER TO-202 CASE MAXIMUM RATINGS: (TC=75°C unless otherwise noted) SYMBOL CEN250B1 CEN250D1 CEN250M1 Peak Repetitive Off-State Voltage VDRM, VRRM 200 400 600 RMS On-State Current IT(RMS) 4.0 Peak One Cycle Surge (t=8.3ms) ITSM 20 Peak Gate Power PGM 500 Average Gate Power Dissipation PG(AV) 100 Peak Gate Current IGM 200 Operating Junction Temperature TJ -40 to +125 Storage Temperature Tstg -40 to +150 Thermal Resistance ΘJA 80 Thermal Resistance ΘJC 7.5 UNITS V A A mW mW mA °C °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ IGT VD=12V, RL=10Ω IH IT=50mA, RGK=1.0KΩ VGT VD=12V, RL=10Ω VTM ITM=4.0A MAX 10 200 3.0 0.8 2.2 UNITS μA μA mA V V R0 (13-May 2013) CEN250B CEN250D CEN250M 4.0 AMP SCR 200 THRU 600 VOLT TO-202 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate Tab is common to pin 2 MARKING: FULL PART NUMBER w w w.
c e n t r a l s e m i .
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| Part Number | Description |
|---|---|
| CEN250D1 | 4.0 AMP SCR |
| CEN250M1 | 4.0 AMP SCR |
| CEN-U95 | PNP SILICON DARLINGTON TRANSISTOR |