Datasheet4U Logo Datasheet4U.com

CEN250B1 - 4.0 AMP SCR

Datasheet Summary

Description

The CENTRAL SEMICONDUCTOR CEN250B1, CEN250D1, and CEN250M1 are epoxy molded silicon controlled rectifiers designed for sensing circuit applications and control systems.

📥 Download Datasheet

Datasheet preview – CEN250B1

📁 Similar Datasheet

  • CEN2301 - P-Channel MOSFET (CET)
  • CEN-U45 - NPN SILICON DARLINGTON TRANSISTOR (Central Semiconductor Corp)
  • CEN7002A - N-Channel MOSFET (CET)
  • CENU05 - SILICON COMPLEMENTARY POWER TRANSISTORS (Central Semiconductor Corp)
  • CENU06 - SILICON COMPLEMENTARY POWER TRANSISTORS (Central Semiconductor Corp)
  • CENU07 - SILICON COMPLEMENTARY POWER TRANSISTORS (Central Semiconductor Corp)
  • CENU55 - SILICON COMPLEMENTARY POWER TRANSISTORS (Central Semiconductor Corp)
  • CENU56 - SILICON COMPLEMENTARY POWER TRANSISTORS (Central Semiconductor Corp)
  • CENU57 - SILICON COMPLEMENTARY POWER TRANSISTORS (Central Semiconductor Corp)
Other Datasheets by Central Semiconductor

Full PDF Text Transcription

Click to expand full text
CEN250B1 CEN250D1 CEN250M1 4.0 AMP SCR 200 THRU 600 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEN250B1, CEN250D1, and CEN250M1 are epoxy molded silicon controlled rectifiers designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER TO-202 CASE MAXIMUM RATINGS: (TC=75°C unless otherwise noted) SYMBOL CEN250B1 CEN250D1 CEN250M1 Peak Repetitive Off-State Voltage VDRM, VRRM 200 400 600 RMS On-State Current IT(RMS) 4.0 Peak One Cycle Surge (t=8.3ms) ITSM 20 Peak Gate Power PGM 500 Average Gate Power Dissipation PG(AV) 100 Peak Gate Current IGM 200 Operating Junction Temperature TJ -40 to +125 Storage Temperature Tstg -40 to +150 Thermal Resistance ΘJA 80 Thermal Resistance ΘJC 7.
Published: |