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CEN250M1 Datasheet 4.0 AMP SCR

Manufacturer: Central Semiconductor

Overview: CEN250B1 CEN250D1 CEN250M1 4.0 AMP SCR 200 THRU 600 VOLT w w w. c e n t r a l s e m i .

Download the CEN250M1 datasheet PDF. This datasheet also includes the CEN250B1 variant, as both parts are published together in a single manufacturer document.

General Description

: The CENTRAL SEMICONDUCTOR CEN250B1, CEN250D1, and CEN250M1 are epoxy molded silicon controlled rectifiers designed for sensing circuit applications and control systems.

MARKING: FULL PART NUMBER TO-202 CASE MAXIMUM RATINGS: (TC=75°C unless otherwise noted) SYMBOL CEN250B1 CEN250D1 CEN250M1 Peak Repetitive Off-State Voltage VDRM, VRRM 200 400 600 RMS On-State Current IT(RMS) 4.0 Peak One Cycle Surge (t=8.3ms) ITSM 20 Peak Gate Power PGM 500 Average Gate Power Dissipation PG(AV) 100 Peak Gate Current IGM 200 Operating Junction Temperature TJ -40 to +125 Storage Temperature Tstg -40 to +150 Thermal Resistance ΘJA 80 Thermal Resistance ΘJC 7.5 UNITS V A A mW mW mA °C °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ IGT VD=12V, RL=10Ω IH IT=50mA, RGK=1.0KΩ VGT VD=12V, RL=10Ω VTM ITM=4.0A MAX 10 200 3.0 0.8 2.2 UNITS μA μA mA V V R0 (13-May 2013) CEN250B CEN250D CEN250M 4.0 AMP SCR 200 THRU 600 VOLT TO-202 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate Tab is common to pin 2 MARKING: FULL PART NUMBER w w w.

c e n t r a l s e m i .

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