Datasheet Details
| Part number | CMLT2222A |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 113.75 KB |
| Description | DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS |
| Datasheet | CMLT2222A_CentralSemiconductor.pdf |
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Overview: CMLT2222A SURFACE MOUNT PIiniTM DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS Central TM Semiconductor Corp.
| Part number | CMLT2222A |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 113.75 KB |
| Description | DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS |
| Datasheet | CMLT2222A_CentralSemiconductor.pdf |
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: The CENTRAL SEMICONDUCTOR CMLT2222A consists of two individual, isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package.
This PIini™ devices has been designed for small signal general purpose and switching applications.
MARKING CODE: L22 SOT-563 CASE MAXIMUM RATINGS: (TA=25 C) SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance VCBO VCEO VEBO IC PD TJ,Tstg ΘJA O O UNITS 75 40 6.0 600 350 -65 to +150 357 V V V mA mW C C/W O O ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25 C unless otherwise noted) SYMBOL ICBO ICBO ICEV IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE TEST CONDITIONS VCB=60V O VCB=60V, TA=125 C VCE=60V, VEB=3.0V VEB=3.0V IC=10µA IC=10mA IE=10µA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=1.0V, IC=150mA VCE=10V, IC=150mA VCE=10V, IC=500mA MIN MAX 10 10 10 10 UNITS nA µA nA nA V V V V V V V 75 40 6.0 0.3 1.0 1.2 2.0 0.6 35 50 75 50 100 40 300 R1 (13-November 2002) Free Datasheet http://../ Central SYMBOL fT Cob Cib hie hie hre hre hfe hfe hoe hoe rb'Cc NF td tr ts tf TM CMLT2222A SURFACE MOUNT PIiniTM DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS O Semiconductor Corp.
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