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CMLT2222AG Datasheet Surface Mount Silicon Dual NPN Transistor

Manufacturer: Central Semiconductor

Overview: CMLT2222AG SURFACE MOUNT SILICON DUAL NPN TRANSISTOR w w w. c e n t r a l s e m i .

General Description

: The CENTRAL SEMICONDUCTOR CMLT2222AG consists of two (2) isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package.

These devices have been designed for small signal general purpose and switching applications.

SOT-563 CASE • Device is Halogen Free by design MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance MARKING CODE: 2CG SYMBOL VCBO VCEO VEBO IC PD PD PD TJ, Tstg ΘJA 75 40 6.0 600 350 300 150 -65 to +150 357 UNITS V V V mA mW mW mW OC OC/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO ICBO ICEV IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE VCB=60V VCB=60V, TA=125 °C VCE=60V, VEB=3.0V VEB=3.0V IC=10μA IC=10mA IE=10μA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=1.0V, IC=150mA VCE=10V, IC=150mA VCE=10V, IC=500mA 75 40 6.0 0.6 35 50 75 50 100 40 10 10 10 10 0.3 1.0 1.2 2.0 300 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 UNITS nA μA nA nA V V V V V V V R5 (29-June 2015) CMLT2222AG SURFACE MOUNT SILICON DUAL NPN TRANSISTOR ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS fT VCE=20V, IC=20mA, f=100MHz 300 MHz Cob VCB=10V, IE=0, f=1.0MHz 8.0 pF Cib VEB=0.5V, IC=0, f=1.0MHz 25 pF hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 kΩ

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