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CMNDM8001 - SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Datasheet Summary

Description

The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

This MOSFET offers Low rDS(ON) and Low Threshold Voltage.

Device is Hal

Features

  • Low 0.5mm Package Profile.
  • Low rDS(ON).
  • Low Threshold Voltage.
  • Logic Level Compatible.
  • Small, FEMTOmini™ 1.0 x 0.8mm, SOT-953 Surface Mount Package SYMBOL VDS VGS ID ID PD TJ, Tstg 20 10 100 200 250 -65 to +150 UNITS V V mA mA mW °C.

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Datasheet preview – CMNDM8001

Datasheet Details

Part number CMNDM8001
Manufacturer Central Semiconductor
File Size 446.54 KB
Description SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
Datasheet download datasheet CMNDM8001 Datasheet
Additional preview pages of the CMNDM8001 datasheet.

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Full PDF Text Transcription

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CMNDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMNDM8001 is an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE: BC SOT-953 CASE • Device is Halogen Free by design FEATURES: • Low 0.5mm Package Profile • Low rDS(ON) • Low Threshold Voltage • Logic Level Compatible • Small, FEMTOmini™ 1.0 x 0.
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