• Part: CMNT3904E
  • Description: ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTOR
  • Category: Transistor
  • Manufacturer: Central Semiconductor
  • Size: 386.11 KB
Download CMNT3904E Datasheet PDF
Central Semiconductor
CMNT3904E
CMNT3904E is ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTOR manufactured by Central Semiconductor.
DESCRIPTION : The CENTRAL SEMICONDUCTOR CMNT3904E and CMNT3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in an FEMTOmini™ SOT-953 package, these ponents provide performance characteristics suitable for the most demanding size constrained applications. MARKING CODES: CMNT3904E: CL CMNT3906E: CM APPLICATIONS - - - - DC / DC Converters Voltage Clamping Protection Circuits Battery powered equipment including: Cell Phones, Digital Cameras, Pagers, PDAs, Laptop puters, etc. SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 40 6.0 200 250 -65 to +150 500 UNITS V V V m A m W °C °C/W SOT-953 CASE FEATURES - - - - Very Small Package Size Low Package Profile, 0.5mm 200m A Collector Current Low VCE(SAT) (0.1V Typ @ 50m A) - Small, FEMTOmini™ 1 x 0.8mm, SOT-953 Surface Mount Package - Collector-Base Voltage - Emitter-Base Voltage MAXIMUM RATINGS: (TA=25°C) Collector-Emitter Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) NPN SYMBOL TEST CONDITIONS MIN TYP ICEV VCE=30V, VEB=3.0V - BVCBO IC=10µA 60 115 BVCEO IC=1.0m A 40 60 - BVEBO IE=10µA 6.0 7.5 - VCE(SAT) IC=10m A, IB=1.0m A .057 - VCE(SAT) IC=50m A, IB=5.0m A 0.1 VBE(SAT) IC=10m A, IB=1.0m A 0.65 0.75 VBE(SAT) - h FE - h FE - Enhanced Specification PNP TYP 90 55 7.9 .05 0.1 0.75 0.85 130 150 MAX 50 0.1 0.2 0.85 0.95 UNITS n A V V V V V V V IC=50m A, IB=5.0m A VCE=1.0V, IC=0.1m A VCE=1.0V, IC=1.0m A 90 100 0.85 240 235 R2 (25-January 2010) .. CMNT3904E NPN CMNT3906E PNP ENHANCED SPECIFICATION SURFACE MOUNT PLEMENTARY SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: SYMBOL TEST CONDITIONS MIN h FE VCE=1.0V, IC=10m A 100 - h FE VCE=1.0V, IC=50m A 70 h FE VCE=1.0V, IC=100m A 30 f T VCE=20V, IC=10m A, f=100MHz 300 Cob VCB=5.0V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz hie VCE=10V,...