CMPDM7003 Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR CMPDM7003 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low r DS(ON) and ESD protection up to 2k V. MARKING CODE: C7003 SOT-23 CASE APPLICATIONS: - Load/Power switches - Power supply converter circuits - Battery powered portable equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Maximum Pulsed Drain Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance FEATURES : - ESD protection up to 2k V - Low r DS(ON) - Low VDS(ON) - Low threshold voltage - Fast switching - Logic level patibility SYMBOL VDS VDG VGS ID IDM PD TJ, Tstg ΘJA UNITS V V V m A A m W °C °C/W 50 50 12 280 1.5 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=5.0V IGSSF, IGSSR VGS=10V IGSSF, IGSSR VGS=12V IDSS VDS=50V, VGS=0 BVDSS VGS=0, ID=10μA VGS(th) VDS=VGS, ID=250μA VSD VGS=0, IS=115m A r DS(ON) VGS=1.8V, ID=50m A r DS(ON) VGS=2.5V, ID=50m A r DS(ON) VGS=5.0V, ID=50m A g FS VDS=10V, ID=200m A Crss VDS=25V, VGS=0, f=1.0MHz Ciss VDS=25V, VGS=0, f=1.0MHz Coss VDS=25V, VGS=0, f=1.0MHz otherwise noted) MIN TYP MAX 100 2.0 2.0 50 1.0 1.4 3.0 2.5 2.0 5.0 50 25 50 0.49 1.6 1.3 1.1 200 UNITS n A μA μA n A V V V Ω Ω Ω m S p F p F p F R1 (27-January 2010) .. CMPDM7003 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: C7003 R1 (27-January 2010) w w w. c e n t r a l s e m i . c o...