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CMPDM203NH - SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Description

The CENTRAL SEMICONDUCTOR CMPDM203NH is a High Current N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications.

Features

  • Low rDS(ON) (0.07Ω MAX @ VGS=2.5V).
  • High current (ID=3.2A).
  • Logic level compatibility SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 20 12 3.2 12.8 350 -55 to +150 357 UNITS V V A A mW °C °C/W.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMPDM203NH SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM203NH is a High Current N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Voltage, and Low Leakage Current.
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