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CMPDM302PH Datasheet Surface Mount P-channel Enhancement-mode Silicon MOSFET

Manufacturer: Central Semiconductor

Overview: CMPDM302PH SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i .

General Description

: The CENTRAL SEMICONDUCTOR CMPDM302PH is a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications.

This MOSFET offers High Current, Low rDS(ON), Low Threshold Voltage, and Low Leakage Current.

MARKING CODE: 302C SOT-23F CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance

Key Features

  • Low rDS(ON) (0.129Ω MAX @ VGS=2.5V).
  • High current (ID=2.4A).
  • Logic level compatibility SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 30 12 2.4 9.6 350 -55 to +150 357 UNITS V V A A mW °C °C/W.

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