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www.DataShePet4RU.OcomCESS CP207
Small Signal Transistor
NPN - Saturated Switch Transistor Chip
CentralTM
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR 9.0 x 14 MILS 8.0 MILS 3.1 x 2.9 MILS 3.1 x 2.9 MILS Al - 13,000Å Au - 6,000Å
GROSS DIE PER 4 INCH WAFER 93,430
PRINCIPAL DEVICE TYPES 2N2369A CMPT2369
BACKSIDE COLLECTOR
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R2 (1-August 2002)
CentralTM
www.DataSheet4U.com Semiconductor Corp.
PROCESS CP207
Typical Electrical Characteristics
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.