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CP302-MPSH10 - NPN - RF Transistor Die

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w w w. c e n t r a l s e m i . c o m CP302-MPSH10 NPN - RF Transistor Die 50mA, 25 Volt The CP302-MPSH10 is a silicon NPN RF transistor designed for low noise UHF/VHF amplifier and high output oscillator applications. MECHANICAL SPECIFICATIONS: Die Size 14.5 x 14.5 MILS B Die Thickness 9.0 MILS Base Bonding Pad Size 2.3 x 2.3 MILS Emitter Bonding Pad Size 2.5 x 2.3 MILS Top Side Metalization Al – 30,000Å E Back Side Metalization Au – 18,000Å Wafer Diameter 4 INCHES Gross Die Per Wafer 53,730 BACKSIDE COLLECTOR R2 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC TJ, Tstg 30 25 3.
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