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PROCESS CP734V
Small Signal Transistors
PNP - Chopper Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization
GEOMETRY
EPITAXIAL PLANAR 31.5 x 31.5 MILS 7.0 MILS 4.7 x 6.7 MILS 4.7 x 8.7 MILS Al - 30,000Å Au - 18,000Å
GROSS DIE PER 5 INCH WAFER 16,986
PRINCIPAL DEVICE TYPES CMPT404A MPS404A
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R2 (22-March 2010)
PROCESS CP734V
Typical Electrical Characteristics
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CP734V Datasheet
