The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PROCESS
Small Signal Transistor
CP782X
PNP - Low VCE(SAT) Transistor Chip
www.DataSheet4U.com
PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization 26 x 26 MILS 5.9 MILS 5.5 x 5.5 MILS 5.5 x 5.5 MILS Al - 30,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 25,536 PRINCIPAL DEVICE TYPES CMLT7820G CMPT7820 CXT7820
R0 (9-September 2010)
w w w. c e n t r a l s e m i . c o m
PROCESS
CP782X
Typical Electrical Characteristics
R0 (9-September 2010)
w w w. c e n t r a l s e m i .
CP782X Datasheet
