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PROCESS
Small Signal Transistor
PNP - High Voltage Transistor Chip
CP710
Central
TM
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 16,880 PRINCIPAL DEVICE TYPES CMPTA94 CXTA94 CZTA94 MPSA94 EPITAXIAL PLANAR 26 x 26 MILS 9.0 MILS 6.1 x 4.9 MILS 5.2 x 5.2 MILS Al - 30,000Å Au - 18,000Å
BACKSIDE COLLECTOR
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R2 (1-August 2002)
www.DataSheet4U.com
Central
TM
PROCESS
CP710
Semiconductor Corp.
Typical Electrical Characteristics
"ON" Voltage
1.4 1.2 1
V, Voltage (V)
0.8 0.6 0.4 0.