The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PROCESS
Small Signal Transistors
CP716V
PNP - High Voltage Transistor Chip
www.DataSheet4U.com
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 29,659 PRINCIPAL DEVICE TYPES CMUT5401 CMPT5401 CXT5401 EPITAXIAL PLANAR 19.7 x 19.7 MILS 7.1 MILS 4.0 x 4.0 MILS 4.7 x 4.7 MILS Al - 30,000Å Au - 18,000Å
BACKSIDE COLLECTOR
R2 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
PROCESS
CP716V
Typical Electrical Characteristics
R2 (22-March 2010)
w w w. c e n t r a l s e m i .
CP716V Datasheet
