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PROCESS
Small Signal Transistors
CP716V
PNP - High Voltage Transistor Chip
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PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 29,659 PRINCIPAL DEVICE TYPES CMUT5401 CMPT5401 CXT5401 EPITAXIAL PLANAR 19.7 x 19.7 MILS 7.1 MILS 4.0 x 4.0 MILS 4.7 x 4.7 MILS Al - 30,000Å Au - 18,000Å
BACKSIDE COLLECTOR
R2 (22-March 2010)
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PROCESS
CP716V
Typical Electrical Characteristics
R2 (22-March 2010)
w w w. c e n t r a l s e m i .
CP716V Datasheet
