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PROCESS
Power Transistor
CP712
Central
TM
PNP - Amp/Switch Transistor Chip
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 1,960 PRINCIPAL DEVICE TYPES CZT7120 EPITAXIAL PLANAR 75 x 75 MILS 9.0 MILS 17 x 12 MILS 31 x 12 MILS Al - 30,000Å Ti/Ni/Ag - 11,300Å
BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R1 (1-August 2002)
www.DataSheet4U.com
Central
TM
PROCESS
CP712
Semiconductor Corp.
Typical Electrical Characteristics
The Typical Electrical Characteristics data for this chip is currently being revised.
CP712 Datasheet
