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PROCESS
Small Signal Transistor
CP710V
PNP - High Voltage Transistor Chip
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PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 25,214 PRINCIPAL DEVICE TYPES CMLTA94 CMPTA94 CMPTA92E CXTA92 CZTA92 CZTA94 EPITAXIAL PLANAR 26 x 26 MILS 7.1 MILS 6.1 x 4.9 MILS 5.2 x 5.2 MILS Al - 30,000Å Au - 18,000Å
R0 (5-August 2010)
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PROCESS
CP710V
Typical Electrical Characteristics
R0 (5-August 2010)
w w w. c e n t r a l s e m i .
CP710V Datasheet
