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CP792V-2N3906 - PNP - General Purpose Transistor Die

Key Features

  • N CP336V-2N5551-CTAN CP316V-2N5551-WN CP336V-2N5551-WN CP317-2N2857-CT N/A CP317-2N918-CT N/A CP319-CZTA44HC-CT CP212-CZTA44HC-CT CP319-TIP47-CT CP212-TIP47-CT CP319-TIP50-CT CP212-TIP5.

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w w w. c e n t r a l s e m i . c o m CP792V-2N3906 PNP - General Purpose Transistor Die 0.2 Amp, 40 Volt The CP792V-2N3906 is a silicon PNP transistor designed for general purpose applications. B E BACKSIDE COLLECTOR MECHANICAL SPECIFICATIONS: Die Size 11 x 11 MILS Die Thickness 7.1 MILS Base Bonding Pad Size 3.74 x 3.74 MILS Emitter Bonding Pad Size 3.74 x 3.74 MILS Top Side Metalization Al – 30,000Å Back Side Metalization Au – 18,000Å Scribe Alley Width 1.5 MILS Wafer Diameter 4 INCHES R0 Gross Die Per Wafer 93,826 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICEV VCE=30V, VEB=3.