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CP792V-2N3906
PNP - General Purpose Transistor Die 0.2 Amp, 40 Volt
The CP792V-2N3906 is a silicon PNP transistor designed for general purpose applications.
B E
BACKSIDE COLLECTOR
MECHANICAL SPECIFICATIONS:
Die Size
11 x 11 MILS
Die Thickness
7.1 MILS
Base Bonding Pad Size
3.74 x 3.74 MILS
Emitter Bonding Pad Size 3.74 x 3.74 MILS
Top Side Metalization
Al – 30,000Å
Back Side Metalization
Au – 18,000Å
Scribe Alley Width
1.5 MILS
Wafer Diameter
4 INCHES
R0 Gross Die Per Wafer
93,826
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS
ICEV
VCE=30V, VEB=3.