CXT3410 Datasheet | Central Semiconductor

.Data Sheet.co.kr CXT3410 NPN CXT7410 PNP SURFACE MOUNT PLEMENTARY LOW VCE(SAT) SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3410 and CXT7410 are Low VCE(SAT) NPN and PNP silicon transistors packaged in the SOT-89 case. High collector current coupled with a low saturation voltage make this an ideal choice for industrial/consumer applications where operational efficiency and size are high priority. SOT-89 CASE Features : - - - - VCE(SAT)=275m V TYP @ IC=1.0A High Current (1.0A MAX) Low Voltage (40V MAX) SOT-89 Surface Mount Package MARKING CODE: FULL PART NUMBER APPLICATIONS: - - - - - Power Management and DC/DC Converters Portable and Battery Powered Products Cellular and Cordless Phones PDAs, puters, Digital Cameras Disk and Tape Drives UNITS V V V A A W °C °C/W MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM PD TJ, Tstg ΘJA 40 25 6.0 1.0 1.5 1.2 -65 to +150 104 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CXT3410 CXT7410 SYMBOL TEST CONDITIONS MIN TYP TYP ICBO VCB=40V IEBO VEB=6.0V BVCBO IC=100μA 40 BVCEO IC=10m A 25 BVEBO IE=100μA 6.0 VCE(SAT) IC=50m A, IB=5.0m A 20 25 VCE(SAT) IC=100m A, IB=10m A 35 40 VCE(SAT) IC=200m A, IB=20m A 75 80 VCE(SAT) IC=500m A, IB=50m A 130 150 VCE(SAT) IC=800m A, IB=80m A 200 220 VCE(SAT) IC=1.0A, IB=100m A 250 275 MAX 100 100 50 75 150 250 400 450 UNITS n A n A V V V m V m V m V m V m V m V R1 (23-February 2010) Datasheet pdf - http://..net/ .Data Sheet.co.kr CXT3410 NPN CXT7410 PNP SURFACE MOUNT PLEMENTARY LOW VCE(SAT) SILICON TRANSISTORS ELECTRICAL SYMBOL VBE(SAT) VBE(ON) h FE h FE h FE h FE f T Cob Cob CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN MAX IC=800m A, IB=80m A 1.1 VCE=1.0V, IC=10m A 0.9...