CXT3820 Datasheet | Central Semiconductor

.Data Sheet.co.kr CXT3820 SURFACE MOUNT VERY LOW VCE(SAT) w w w. c e n t r a l s e m i . c o m NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3820 is a very low VCE(SAT) NPN transistor designed for applications where electrical and thermal efficiency are prime requirements. Packaged in an industry standard SOT-89 case, this device brings updated electrical specifications and characteristics suitable for the most demanding designs. MARKING: FULL PART NUMBER SOT-89 CASE - Device is Halogen Free by design Features : APPLICATIONS: - High Current (IC=1.0A) - VCE(SAT)=0.28V MAX @ IC=1.0A - SOT-89 surface mount package - plementary PNP device: CXT7820 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance - DC/DC Converters - Voltage Clamping - Protection Circuits - Battery powered Cell Phones, Pagers, Digital Cameras, PDAs, Laptops, etc. SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJA UNITS V V V A A m A W °C °C/W 80 60 5.0 1.0 2.0 300 1.2 -65 to +150 104 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=60V IEBO VEB=5.0V BVCBO IC=100µA 80 BVCEO IC=10m A 60 BVEBO IE=100µA 5.0 VCE(SAT) IC=100m A, IB=1.0m A VCE(SAT) IC=500m A, IB=50m A VCE(SAT) IC=1.0A, IB=100m A VBE(SAT) IC=1.0A, IB=50m A VBE(ON) VCE=5.0V, IC=1.0A h FE VCE=5.0V, IC=1.0m A 200 h FE VCE=5.0V, IC=500m A 200 h FE VCE=5.0V, IC=1.0A 100 f T VCE=10V, IC=50m A 150 Cob VCB=10V, IE=0, f=1.0MHz MAX 100 100 0.115 0.15 0.28 1.1 0.9 UNITS n A n A V V V V V V V V MHz p F R1 (23-February 2010) Datasheet pdf - http://..net/ .Data Sheet.co.kr CXT3820 SURFACE MOUNT VERY LOW VCE(SAT) NPN SILICON TRANSISTOR SOT-89...