DESCRIPTION
: The CENTRAL SEMICONDUCTOR MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS
: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCES VEBO IC PD TJ, Tstg ΘJA 200 200 10 600 2.0 -65 to +150 62.5 ELECTRICAL CHARACTERISTICS
: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=180V IEBO VBE=10V BVCES IC=1.0mA 200 VCE(SAT) IC=20mA, IB=25µA VCE(SAT) IC=80mA, IB=40µA VCE(SAT) IC=160mA, IB=100µA VBE(ON) VCE=5.0V, IC=160mA hFE VCE=5.0V, IC=100µA 3000 hFE VCE=5.0V, IC=10mA 3000 hFE VCE=5.0V, IC=160mA 3000 MAX 500 100 0.9 1.1 1.2 2.0 UNITS V V V mA W °C °C/W UNITS nA nA V V V V V R8 (7-May 2019) CZT2000 SURFACE MOUNT SILICON EXTREMELY HIGH VOLTAGE NPN DARLINGTON TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER SYMBOL A B C D E F G H I J K...
Central Semiconductor
