MJ4032 Overview
Description
The CENTRAL SEMICONDUCTOR MJ4032, MJ4035 types are Complementary Silicon Power Darlington Transistors designed for general purpose and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Base Current IB Power Dissipation PD Operating and Storage Junction Temperature TJ, Tstg ΘJC 100 100 5.0 16 0.5 150 -65 to +200 1.17 SYMBOL TEST CONDITIONS MIN ICER VCE=100V, RBE=1.0kΩ ICER VCE=100V, RBE=1.0kΩ, TC=150°C ICEO VCE=50V IEBO VEB=5.0V BVCEO IC=100mA 100 VCE(SAT) IC=10A, IB=40mA VCE(SAT) IC=16A, IB=80mA VBE(ON) VCE=3.0V, IC=10A hFE VCE=3.0V, IC=10A 1000 MAX 1.0 5.0 3.0 5.0 2.5 4.0 3.0 UNITS V V V A A W °C °C/W UNITS mA mA mA mA V V V V R0 (4-May 2009) CentralTM Semiconductor Corp.
