| Part Number | MJ4032 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·With TO-3 package ·Respectively complement to type MJ4035 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications. ABSOLUTE M. SYMBOL PARAMETER CONDITIONS MIN MJ4032 MAX UNIT VCEO Collector-Emitter Breakdown Voltage IC=-100mA; IB= 0 B -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-10A; IB=-40mA -2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-16A; IB=-80mA -4 V VBE(sat) Base-Emitte. |
MJ4032 Datasheet and Specifications PDF
The MJ4032 is a Silicon PNP Darlingtion Power Transistor.
| Part Number | MJ4032 Datasheet |
|---|---|
| Description | (MJ4030 - MJ4032) MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS |
| Manufacturer | Comset Semiconductors |
| Overview |
PNP MJ4030 – MJ4031 – MJ4032 MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS
They are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 m.
PNP MJ4030 * MJ4031 * MJ4032 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO Ratings Collector-Emitter Voltage (*) Collector Cutoff Current Test Condition(s) IC=-100 mA, IB=0 VCE=-30 Vdc, IB=0 VCE=-40 Vdc, IB=0 VCE=-50 V, IB=0 VBE=-5.0 V, IC=0 V. |
| Part Number | MJ4032 Datasheet |
|---|---|
| Description | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR MJ4032, MJ4035 types are Complementary Silicon Power Darlington Transistors designed for general purpose and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE M. NITS V V V A A W °C °C/W UNITS mA mA mA mA V V V V R0 (4-May 2009) CentralTM Semiconductor Corp. MJ4032 PNP MJ4035 NPN COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER C) COLLECTOR MARKING: FULL PART NUMBER R0 (4-May 2009) . |
| Part Number | MJ4032 Datasheet |
|---|---|
| Description | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| Manufacturer | STMicroelectronics |
| Overview | The MJ4035 is silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for use in general purpose and amplifier applications. . o Unit C C For PNP types voltage and current values are negative. June 1997 1/4 MJ4032 / MJ4035 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.17 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEO I EBO Parameter Collector Cut-off . |