MPSA26
DESCRIPTION
: The CENTRAL SEMICONDUCTOR MPSA26 and MPSA27 are silicon NPN Darlington transistors manufactured by the epitaxial planar process and designed for applications requiring extremely high gain.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS
ICBO
VCB=40V
ICBO
VCB=50V
ICES
VCE=40V
ICES
VCE=50V
IEBO
VEB=10V
BVCBO
IC=100μA
BVCES
IC=100μA
VCE(SAT) IC=100m A, IB=100μA
VBE(ON)
VCE=5.0V, IC=100m A h FE VCE=5.0V, IC=10m A h FE VCE=5.0V, IC=100m A f T VCE=5.0V, IC=10m A, f=100MHz
SYMBOL VCBO VCES VEBO IC PD TJ, Tstg ΘJA
MPSA26 50
MPSA27 60
50 60
-65 to +150
MPSA26 MIN MAX
- 100 -- 500 -- 100 50 50
- 1.5
- 2.0 10,000 10,000 125
- MPSA27 MIN MAX
-- 100 -- 500
- 100 60 60
-...
