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MPSA26 - SILICON NPN DARLINGTON TRANSISTORS

General Description

The CENTRAL SEMICONDUCTOR MPSA26 and MPSA27 are silicon NPN Darlington transistors manufactured by the epitaxial planar process and designed for applications requiring extremely high gain.

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MPSA26 MPSA27 SILICON NPN DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA26 and MPSA27 are silicon NPN Darlington transistors manufactured by the epitaxial planar process and designed for applications requiring extremely high gain. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=40V ICBO VCB=50V ICES VCE=40V ICES VCE=50V IEBO VEB=10V BVCBO IC=100μA BVCES IC=100μA VCE(SAT) IC=100mA, IB=100μA VBE(ON) VCE=5.0V, IC=100mA hFE VCE=5.0V, IC=10mA hFE VCE=5.