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MPSA27 - SILICON NPN DARLINGTON TRANSISTORS

Download the MPSA27 datasheet PDF. This datasheet also covers the MPSA26 variant, as both devices belong to the same silicon npn darlington transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR MPSA26 and MPSA27 are silicon NPN Darlington transistors manufactured by the epitaxial planar process and designed for applications requiring extremely high gain.

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Note: The manufacturer provides a single datasheet file (MPSA26-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Central Semiconductor

Part Number Description
MPSA20 NPN SILICON TRANSISTORS
MPSA26 SILICON NPN DARLINGTON TRANSISTORS
MPSA28 SILICON NPN DARLINGTON TRANSISTORS
MPSA29 SILICON NPN DARLINGTON TRANSISTORS
MPSA05 COMPLEMENTARY SILICON TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MPSA26 MPSA27 SILICON NPN DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA26 and MPSA27 are silicon NPN Darlington transistors manufactured by the epitaxial planar process and designed for applications requiring extremely high gain. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=40V ICBO VCB=50V ICES VCE=40V ICES VCE=50V IEBO VEB=10V BVCBO IC=100μA BVCES IC=100μA VCE(SAT) IC=100mA, IB=100μA VBE(ON) VCE=5.0V, IC=100mA hFE VCE=5.0V, IC=10mA hFE VCE=5.