Datasheet4U Logo Datasheet4U.com

PN2369A - SILICON NPN TRANSISTORS

General Description

The CENTRAL SEMICONDUCTOR 2N5769 and PN2369A are epitaxial planar NPN Silicon Transistors designed for ultra high speed saturated switching applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PN2369A NPN Transistor Fairchild Semiconductor
PN2369A NPN transistors Philips
PN2369 NPN transistors Philips
PN2369 NPN Switching Transistor Fairchild Semiconductor
PN200 PNP Amplifier Fairchild Semiconductor

Other Datasheets by Central Semiconductor

Part Number Description
PN2221 NPN SILICON TRANSISTOR
PN2221A NPN SILICON TRANSISTOR
PN2222 NPN SILICON TRANSISTOR
PN2222A NPN SILICON TRANSISTOR
PN2906 PNP SILICON TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N5769 PN2369A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5769 and PN2369A are epitaxial planar NPN Silicon Transistors designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCES VCEO VEBO IC ICM PD TJ, Tstg 40 40 15 4.5 200 500 350 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=20V ICBO VCB=20V, TA=125°C ICES VCE=20V (2N5769) IEBO VEB=4.