PN2369A Datasheet and Specifications PDF

The CENTRAL SEMICONDUCTOR 2N5769 and PN2369A are epitaxial planar NPN Silicon Transistors designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMU.

IB=3.0mA VBE(SAT) IC=100mA, IB=10mA hFE VCE=0.35V, IC=10mA (2N5769) 40 hFE VCE=1.0V, IC=10mA (PN2369A) 40 hFE VCE=0.4V, IC=30mA 30 hFE VCE=1.0V, IC=100mA 20 MAX 400 30 400 1.0 200 250 500 850 1.15 1.6 120 120 UNITS V V V V mA mA mW °C UNITS nA µA nA µA V V V V mV mV mV mV V V R2 (7-N.

PN2369A / MMBT2369A / MMPQ2369 Discrete POWER & Signal Technologies PN2369A MMBT2369A C MMPQ2369 B E B E B E B E E C BE TO-92 SOT-23 Mark: 1S B SOIC-16 C C C C C C C C NPN Switchi.

cs Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Effective 4 Die Each Die PN2369A 350 2.8 125 357 Max MMBT2369A* 225 1.8 556 125 240 MMPQ2369 1,000 8.0 Un.

NPN switching transistor in a TO-92; SOT54 plastic package. PINNING PIN 1 2 3 collector base emitter PN2369; PN2369A DESCRIPTION 1 handbook, halfpage 2 3 1 2 3 MAM279 Fig.1 Simplified outline .

* Low current (max. 200 mA)
* Low voltage (max. 15 V). APPLICATIONS
* High-speed switching applications. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PINNING PIN 1 2 3 collector base emitter PN2369; PN2369A DESCRIPTION 1 handbook, halfpage 2 3 1 2 3 MAM279 Fig.1 Si.