PN2369A Overview
Description
The CENTRAL SEMICONDUCTOR 2N5769 and PN2369A are epitaxial planar NPN Silicon Transistors designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-92 CASE SYMBOL VCBO VCES VCEO VEBO IC ICM PD TJ, Tstg 40 40 15 4.5 200 500 350 -65 to +150 SYMBOL TEST CONDITIONS MIN ICBO VCB=20V ICBO VCB=20V, TA=125°C ICES VCE=20V (2N5769) IEBO VEB=4.5V (2N5769) BVCBO IC=10µA 40 BVCES IC=10µA 40 BVCEO IC=10mA 15 BVEBO IE=10µA 4.5 VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=30mA, IB=3.0mA VCE(SAT) IC=100mA, IB=10mA VBE(SAT) IC=10mA, IB=1.0mA 700 VBE(SAT) IC=30mA, IB=3.0mA VBE(SAT) IC=100mA, IB=10mA hFE VCE=0.35V, IC=10mA (2N5769) 40 hFE VCE=1.0V, IC=10mA (PN2369A) 40 hFE VCE=0.4V, IC=30mA 30 hFE VCE=1.0V, IC=100mA 20 MAX 400 30 400 1.0 200 250 500 850 1.15 1.6 120 120 UNITS V V V V mA mA mW °C UNITS nA µA nA µA V V V V mV mV mV mV V V R2 (7-November 2019) 2N5769 PN2369A SILICON NPN TRANSISTORS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX fT VCE=10V, IC=10mA, f=100MHz 500 Cob VCB=5.0V, IE=0, f=140kHz 4.0 ton VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA 12 toff VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA 18 ts VCC=10V, IC=10mA, IB1=IB2=10mA 13 TO-92 CASE - MECHANICAL OUTLINE UNITS MHz pF ns ns ns LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER w w w.
