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TIP141 Datasheet Complementary Silicon Power Darlington Transistors

Manufacturer: Central Semiconductor

Overview: TIP140 TIP141 TIP142 NPN TIP145 TIP146 TIP147 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i .

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

: The CENTRAL SEMICONDUCTOR TIP140 and TIP145 series devices are complementary silicon power Darlington transistors manufactured by the epitaxial base process, designed for general purpose amplifier and low speed switching applications where high gain is required.

MARKING: FULL PART NUMBER TO-218 TRANSISTOR CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC TIP140 TIP145 60 TIP141 TIP146 80 TIP142 TIP147 100 60 80 100 5.0 10 20 0.5 125 -65 to +150 1.0 UNITS V V V A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=Rated VCBO ICEO VCE=½Rated VCEO IEBO VEB=5.0V BVCEO IC=30mA (TIP140, TIP145) 60 BVCEO IC=30mA (TIP141, TIP146) 80 BVCEO IC=30mA (TIP142, TIP147) 100 VCE(SAT) IC=5.0A, IB=10mA VCE(SAT) IC=10A, IB=40mA VBE(ON) VCE=4.0V, IC=10A VF IF=10A hFE VCE=4.0V, IC=5.0A 1.0K hFE VCE=4.0V, IC=10A 500 ton IC=10A, IB1=IB2=40mA, RL=3.0Ω 0.9 toff IC=10A, IB1=IB2=40mA, RL=3.0Ω 4.0 MAX 1.0 2.0 2.0 2.0 3.0 3.0 2.8 UNITS mA mA mA V V V V V V V μs μs R3 (23-December 2015) TIP140 TIP141 TIP142 NPN TIP145 TIP146 TIP147 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS TO-218 TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER w w w.

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