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TIP141 - NPN Epitaxial Silicon Darlington Transistor

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TIP140/141/142 TIP140/141/142 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145/146/147 1 TO-3P NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP140 : TIP141 : TIP142 Value 60 80 100 60 80 100 5 10 15 0.5 125 150 - 65 ~ 150 Units V V V V V V V A A A W °C °C 1.Base 2.Collector 3.