| Part Number | TIP141 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
DATA SHEET
Darlington Complementary Silicon Power Transistors
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
Designed for general−purpose amplifier and low frequency swi.
* High DC Current Gain * Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V * Collector *Emitter Sustaining Voltage * @ 30 mA VCEO(sus) = 60 Vdc (Min) * TIP140, TIP145 = 80 Vdc (Min) * TIP141, TIP146 = 100 Vdc (Min) * TIP142, TIP147 * Monolithic Construction with Built *In Base *Emitter Shunt Resistor * These are . |
TIP141 Datasheet and Specifications PDF
The TIP141 is a Darlington Complementary Silicon Power Transistors.
Key Specifications
| Package | TO-247 |
|---|---|
| Pins | 3 |
| Height | 12.2 mm |
| Length | 15.2 mm |
| Width | 4.9 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | TIP141 Datasheet |
|---|---|
| Description | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR TIP140 and TIP145 series devices are complementary silicon power Darlington transistors manufactured by the epitaxial base process, designed for general purpose amplifier an. YP ICBO VCB=Rated VCBO ICEO VCE=½Rated VCEO IEBO VEB=5.0V BVCEO IC=30mA (TIP140, TIP145) 60 BVCEO IC=30mA (TIP141, TIP146) 80 BVCEO IC=30mA (TIP142, TIP147) 100 VCE(SAT) IC=5.0A, IB=10mA VCE(SAT) IC=10A, IB=40mA VBE(ON) VCE=4.0V, IC=10A VF IF=10A hFE VCE=4.0V, IC=5.0A 1.0K h. |
| Part Number | TIP141 Datasheet |
|---|---|
| Description | NPN SILICON POWER DARLINGTONS |
| Manufacturer | Bourns Electronic |
| Overview | TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with TIP145, TIP146 and TIP147 125 W at 25°C Case Temperature 10 A Continuous Collector Current Minimum hF. Tstg TL VCEO V CBO SYMBOL VALUE 60 80 100 60 80 100 5 10 15 0.5 125 3.5 100 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 1 W/°C. Derate linearly to 150°C free air temperat. |
| Part Number | TIP141 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) ·Complement to Type TIP146 ·Minimum Lot-to-Lot variations for robust device performance a. c & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 1. |