2N6030 Overview
Description
The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N5629 2N6029 100 2N5630 2N6030 120 100 120 7.0 16 20 5.0 200 -65 to +200 0.875 SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEX VCE=Rated VCEO, VEB=1.5V ICEX VCE=Rated VCEO, VEB=1.5V, TC=150°C ICEO VCE=½Rated VCEO IEBO VEB=7.0V.
