| Part Number | 2N6030 Datasheet |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier app. . |
2N6030 Datasheet and Specifications PDF
The 2N6030 is a COMPLEMENTARY SILICON POWER TRANSISTORS.
| Part Number | 2N6030 Datasheet |
|---|---|
| Description | (2N6029 / 2N6030) Silicon PNP Power Transistor |
| Manufacturer | SavantIC |
| Overview | ·With TO-3 package ·Complement to type 2N5629 2N5630 ·High power dissipations APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION . stors 2N6029 2N6030 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6029 IC=-0.2A ;IB=0 2N6030 IC=-10A; IB=-1A IC=-16A ;IB=-4A IC=-10A; IB=-1A IC=-8A ; VCE=-2V VCB=ratedVCBO; IE=0 2N6029 ICEO Collector cut-off current 2N6030 VCE=-60V; IB=0 VCE=ratedVCB VCE=ratedVCB; TC=150 VEB=-7V; IC. |
| Part Number | 2N6030 Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5630/D High-Voltage Ċ High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switc. . |