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CMS-S040-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
1.016 * 1.016 mm
2
Bond Pad size(B) :
0.889 * 0.889 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Metalization :
Cathode Ti/Ni/Ag
Electrical Characteristics
Sym.
Spec. Limit
Unit
Maximum Instantaneous Forward Volt ° at IF : 1.0Amp. 25 C
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VF max
0.48
Volt
Minimum Instantaneous Reverse Voltage ° at IR : 200 uA 25 C
VR min.
43
Volt.
Minimum Non-repetitive Peak Surge current at 25 C
°
IFSM
40
Amp
Storage Temperature
TSTG
-65 to +125
°
C
HsinChu Headquarter
5F, No.
CMS-S040-040 Datasheet