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CMS-S040-080
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
A
B
Electrical Characteristics
Chip size(A):
1.016 * 1.016 mm2
Bond Pad size(B) :
0.889 * 0.889 mm2
Thickness :
300µm ± 20µm
Metalization : Anode Ti/Ni/Ag
Metalization : Cathode Ti/Ni/Ag
Sym.
Spec. Limit
Unit
Maximum Instantaneous Forward Volt at IF : 1.0Amp. 25°C
VF max
0.80
Volt
Minimum Instantaneous Reverse Voltage at IR : 200 uA 25°C
VR min.
83
Minimum Non-repetitive Peak Surge current at 25°C
IFSM
40
Storage Temperature
TSTG
-65 to +125
Volt. Amp
°C
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CMS-S040-080 Datasheet