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CMS-S087-040
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
Chip size(A):
2.210* 2.210 mm
2
Bond Pad size(B) :
2.083 *2.083 mm
2
A
Thickness : 300µm ± 20µm
Metalization :
Anode Ti/Ni/Ag
B
Metalization :
Cathode Ti/Ni/Ag
Electrical Characteristics
Sym.
Spec. Limit
Unit
Maximum Instantaneous Forward Volt ° at IF : 8.0Amp. 25 C
www.DataSheet4U.com
VF max
0.54
Volt
Minimum Instantaneous Reverse Voltage ° at IR : 300 uA 25 C
VR min.
43
Volt.
Minimum Non-repetitive Peak Surge current at 25 C
°
IFSM
150
Amp
Storage Temperature
TSTG
-65 to +125
°
C
HsinChu Headquarter
5F, No.
CMS-S087-040 Datasheet
