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CMT2301
P-CHANNEL ENHANCEMENT MODE MOSFET
GENERAL DESCRIPTION
FEATURES
The CMT2301 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology.
This high density process is especially tailored to minimize
on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook computer
power management and other battery powered circuits, and
low in-line power loss are needed in a very small outline
surface mount package.
-20V/-2.3A ,RDS(ON)=130 mΩ@VGS=-4.5V -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.
CMT2301 Datasheet
