GFP4N60 - N-channel enhancement mode power field effect Transistors

General Description

Transistors are produced using planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance provide superior switching performance, and withstand high energy pulse in the avalanche

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GFP4N60 n-channel enhancement mode power field effect transistors by Chinahaiso electronic - Datasheet Preview

Datasheet Details

Part number	GFP4N60
Manufacturer	Chinahaiso electronic
File Size	43.05 KB
Description	N-channel enhancement mode power field effect Transistors
Datasheet	GFP4N60 Datasheet

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Chinahaiso electronic Co.Ltd http://www.chinahaiso.com MOSFET GFP 4N60 GFP 4N60 General description  These N-channel enhancement mode power field effect Transistors are produced using planar stripe DMOS technology.  This advanced technology has been especially tailored to minimize on-state resistance provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.